Title :
Characterization of MOS transistors integrated on high resistivity silicon with a DSSD process
Author :
Batignani, G. ; Forti, F. ; Giorgi, M. ; Rampino, G. ; Tritto, S. ; Bosisio, L. ; Marina, R. Della
Author_Institution :
Ist. Nazionale di Fisica Nucl., Pisa, Italy
Abstract :
We have fabricated MOS transistors with a commercial double sided silicon detector (DSSD) process, on the same wafer as the detector. These devices have been simulated and measured in the lab both in the DC characteristics and in the noise figures
Keywords :
MOSFET; detector circuits; nuclear electronics; silicon radiation detectors; DC characteristics; MOS transistors; Si; commercial double sided silicon detector process; high resistivity silicon; noise figures; Conductivity; Decision support systems; Detectors; Dielectric substrates; Doping profiles; Implants; MOS capacitors; MOS devices; MOSFETs; Silicon;
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3534-1
DOI :
10.1109/NSSMIC.1996.591012
