DocumentCode
1820727
Title
Characterization of MOS transistors integrated on high resistivity silicon with a DSSD process
Author
Batignani, G. ; Forti, F. ; Giorgi, M. ; Rampino, G. ; Tritto, S. ; Bosisio, L. ; Marina, R. Della
Author_Institution
Ist. Nazionale di Fisica Nucl., Pisa, Italy
Volume
1
fYear
1996
fDate
2-9 Nov 1996
Firstpage
407
Abstract
We have fabricated MOS transistors with a commercial double sided silicon detector (DSSD) process, on the same wafer as the detector. These devices have been simulated and measured in the lab both in the DC characteristics and in the noise figures
Keywords
MOSFET; detector circuits; nuclear electronics; silicon radiation detectors; DC characteristics; MOS transistors; Si; commercial double sided silicon detector process; high resistivity silicon; noise figures; Conductivity; Decision support systems; Detectors; Dielectric substrates; Doping profiles; Implants; MOS capacitors; MOS devices; MOSFETs; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location
Anaheim, CA
ISSN
1082-3654
Print_ISBN
0-7803-3534-1
Type
conf
DOI
10.1109/NSSMIC.1996.591012
Filename
591012
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