Class-E power amplifier design at 2.5 GHz using a packaged transistor

Author

Collins, Gayle Fran ; Wood, Jo

Author_Institution

MaXentric Technol., La Jolla, CA, USA

fYear

2013

fDate

20-20 Jan. 2013

Firstpage

88

Lastpage

90

Abstract

A Class-E power amplifier has been designed to operate at 2.5 GHz using a commercial, packaged GaAs pHEMT. The design approach used a novel analysis of the package impedances. The objective was to present optimal harmonic loads to the transistor, using lumped-component matching on commercial PCB material. Using an MRFG35010 plastic packaged transistor, a drain efficiency of 72% with about 3 W output power was achieved at 2.55 GHz.

Keywords

III-V semiconductors; UHF amplifiers; gallium arsenide; high electron mobility transistors; power amplifiers; GaAs; GaAs pHEMT; MRFG35010 plastic packaged transistor; PCB material; class-E power amplifier design; frequency 2.55 GHz; lumped-component matching; optimal harmonic load; package impedance analysis; Capacitance; Gallium arsenide; Harmonic analysis; Power amplifiers; Resonant frequency; Switches; Transistors; Class-E; Power amplifier; high efficiency; switching amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4673-2915-6

Electronic_ISBN

978-1-4673-2931-6

Type

conf

DOI

10.1109/PAWR.2013.6490198

Filename

6490198