Low-power low-noise BJT amplifier for nuclear applications

Author

Bertuccio, G. ; Cordoni, M. ; Fasoli, L. ; Sampietro, M.

Author_Institution

Dipartimento di Elettronica, Politecnico di Milano, Italy

Volume

1

fYear

1996

fDate

2-9 Nov 1996

Firstpage

470

Abstract

This work present an analysis of the peculiar characteristics of the front-end electronics for radiation detectors employing bipolar transistors, taking into account the noise, speed and power-dissipation constraints. It is shown that, in a first approximation, the optimum processing time is inversely proportional to the dissipated power P_d of the front-end stage, while the optimum noise performance can be made almost independent on P_d. The noise characteristics of a bipolar transistor having a maximum cut-off frequency of 8 GHz have been experimentally determined, and discussed in relation with the low-power requirements. A prototype of a charge amplifier operated with a single power supply of 3 Volt and a dissipation of 600 μW has been tested and showed a ENC=470 electrons r.m.s. at 10 ns RC-CR shaping and with a total input capacitance of 6 pF

Keywords

bipolar transistor circuits; detector circuits; nuclear electronics; pulse amplifiers; semiconductor device noise; 10 ns; 3 V; 6 pF; 600 muW; 8 GHz; BJT amplifier; RC-CR shaping; bipolar transistors; capacitance; charge amplifier; cut-off frequency; dissipated power; front-end electronics; low-noise; low-power; optimum noise performance; optimum processing time; power-dissipation; radiation detectors; Bipolar transistors; Cutoff frequency; Electrons; Low-noise amplifiers; Nuclear electronics; Power amplifiers; Power supplies; Prototypes; Radiation detectors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

0-7803-3534-1

Type

conf

DOI

10.1109/NSSMIC.1996.591033

Filename

591033