Oxide-trap based on charge pumping (OTCP) extraction method for irradiated MOSFET Devices:Part I (High frequencies)

This paper proposes a new extraction method of radiation-induced oxide-trap density (ΔN₀₁), called OTCP (Oxide-Trap based on Charge-Pumping). In the OTCP method, we use a High Frequency (HF) standard charge-pumping measurement. By applying a HF gate voltage signal, we avoid the border-trap effect in CP current (I_cp) measurements. Hence, I_cp is only due to the interface-trap contribution. Using the HF-OTCP method, we have demonstrated that AN₀₁ is only dependent on ΔV_th, (threshold voltage shift) and ΔI_cpm (augmentation of maximum CP current). We have also clearly shown that ΔV_th,, can be obtained from lateral shift of charge pumping Elliot curves and ΔI_cpm from vertical shift. Thus, this new procedure permits to have ΔN₀₁ without needing any additional techniques. Finally, it can be used in rapid hardness assurance test to evaluate the radiation-induced both oxide and interface traps.