DocumentCode :
18213
Title :
Size-dependent photoluminescence in silicon nanostructures: quantum confinement effect
Author :
Kumar, Vipin ; Saxena, Kunal ; Shukla, A.K.
Author_Institution :
Dept. of Phys., Indian Inst. of Technol. Delhi, New Delhi, India
Volume :
8
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
311
Lastpage :
314
Abstract :
Visible photoluminescence (PL) from laser-etched silicon nanostructures has been analysed. A systematic size dependence study of PL from silicon nanostructures has been performed. The PL from these structures is attributed to the quantum confinement effect. Different quantum confinement models have been used for PL and Raman lineshape fitting to calculate the mean size and size distribution of silicon nanostructures and the results are comparatively studied. Calculated values of oscillator strength and radiative lifetime show that PL is due to radiative recombination of confined excitons.
Keywords :
Raman spectra; elemental semiconductors; excitons; laser beam etching; nanofabrication; nanostructured materials; oscillator strengths; photoluminescence; radiative lifetimes; silicon; Raman lineshape spectra; Si; confined excitons; laser etched silicon nanostructures; oscillator strength; quantum confinement effect; radiative lifetime; radiative recombination; size dependent visible photoluminescence; size distribution;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2012.0910
Filename :
6550647
Link To Document :
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