Title :
A 4-bit SiGe passive phase shifter for X-band phased arrays
Author :
Kalyoncu, I. ; Ozeren, Emre ; Kaynak, Mehmet ; Gurbuz, Yasar
Author_Institution :
Fac. of Eng. & Natural Sci. -FENS, Sabanci Univ., Istanbul, Turkey
Abstract :
This paper presents a 4-bit passive phase shifter for X-band (8-12 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process. All bits are digitally controlled. The 22.5° and 45° bits are based on switched low-pass network while the 90° and 180° bits are based on switching between high-pass/low-pass filters. Filters are implemented using on-chip spiral inductors and high-Q MIM capacitors. Switching functionality is obtained by isolated NMOS transistors employing resistive body floating technique. All bits are optimized to minimize the RMS phase error. Ordering of bits is optimized so as to minimize the overall insertion loss. Simulated insertion loss is 12±2 dB and RMS phase error is less than 2° over X-band frequencies.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MIM devices; MMIC phase shifters; MOSFET; Q-factor; antenna phased arrays; high-pass filters; low-pass filters; microwave antenna arrays; semiconductor materials; 4-bit passive phase shifter; BiCMOS process; RMS phase error; SiGe; X-band phased arrays; frequency 8 GHz to 12 GHz; high-Q MIM capacitors; high-pass-low-pass filter switching; insertion loss; isolated NMOS transistors; on-chip spiral inductors; resistive body floating technique; silicon-germanium passive phase shifter; size 0.25 mum; switched low-pass network; switching functionality; BiCMOS integrated circuits; Frequency measurement; Insertion loss; Loss measurement; Phase measurement; Phase shifters; Silicon germanium; Phase shifter; SiGe BiCMOS; T/R module; X-band; phased array;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4673-2915-6
Electronic_ISBN :
978-1-4673-2931-6
DOI :
10.1109/PAWR.2013.6490215
