Title :
Optical coherent control in semiconductors
Author :
Erland, J. ; Lyssenko, V.G. ; Hvam, J.M.
Author_Institution :
Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
Abstract :
Summary form only given. The developments with coherent control (CC) techniques in optical spectroscopy have recently demonstrated population control and coherence manipulations when the induced optical phase is explored with phase-locked laser pulses. These and other developments have been guiding the new research field of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase-locked laser pulses. The sample is a narrow GaAs single quantum well.
Keywords :
III-V semiconductors; gallium arsenide; light coherence; multiwave mixing; photoluminescence; quantum optics; semiconductor quantum wells; spectral line broadening; time resolved spectra; GaAs; four-wave mixing; fringe contrast decay change; inhomogeneous broadening; optical coherent control; phase-locked laser pulses; phase-locked pulse pair generation; photoluminescence; population control; semiconductor single quantum well; time-delayed pulse; Four-wave mixing; Nonlinear optics; Optical control; Optical mixing; Optical pulses; Photoluminescence; Semiconductor lasers; Semiconductor nanostructures; Spectroscopy; Stimulated emission;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.962055
