Modelling of power semiconductor devices for pulse power applications

Operating devices within the data-sheets limits assures safe and reliable operation of devices, however some applications such as pulsed power fall outside the natural applications limits for which the devices are originally designed. Therefore modelling these devices outside their normal application area becomes important. In this paper we introduce a new methodology where by electro-thermal device models are created from the datasheet information which can be used to calculate the maximum junction temperature for reliable operation.