Oxide-trap based on charge pumping (OTCP) extraction method for irradiated MOSFET Devices: Part II (Low frequencies)

We present an extraction of the OTCP (Oxide-Trap based on Charge-Pumping) method from high frequencies (HF) to low frequencies (LF). Thus, using the LF-OTCP method, the interface-trap and border-trap (switching oxide trap) are simultaneously involved in charge pumping (CP) current (I_cp) measurements. We have found that radiation-induced oxide-trap (ΔN₀₁) is only dependent on (threshold voltage shift), AI_cpm.h (augmentation of maximum CP current at high frequencies), and ΔI_cpm.l (augmentation of maximum CP current at low frequencies). Where ΔI_cpm.l and ΔI_cpm.h can be easily obtained from vertical shift of charge pumping curve at low and high frequencies respectively, and ΔV_th from lateral one.