Lithium ion irradiation effects on diodes manufactured on epitaxial silicon

Author

Bisello, D. ; Candelori, A. ; Contarato, D. ; Fretwurst, E. ; Kaminski, A. ; Lindström, G. ; Litovchenko, A. ; Rando, R. ; Schramm, A. ; Wyss, J.

Author_Institution

Dipt. di Fisica, Padova Univ., Italy

Volume

1

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

606

Abstract

Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high-energy Lithium ions in order to investigate the effects of high bulk damage levels in such devices. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. The leakage current density increase, the variation of the depletion voltage and their annealing characteristics, as well as the charge collection properties of these new devices are presented and discussed in this study.

Keywords

crystal growth from melt; elemental semiconductors; ion beam effects; leakage currents; liquid phase epitaxial growth; radiation hardening (electronics); semiconductor counters; semiconductor epitaxial layers; silicon; Li ion irradiation effects; Si:Li; depletion voltage; diodes; epitaxial Si; high bulk damage levels; high luminosity colliders; leakage current density; pixel detectors; Diodes; Epitaxial layers; Lithium; Manufacturing; Radiation detectors; Semiconductor radiation detectors; Silicon; Substrates; Telephony; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1352115

Filename

1352115