Micro Barkhausen-Kurz oscillators for terahertz integrated systems

Author

Dixit, Abhishek ; Snapp, Justin P. ; Lee, Tong H.

Author_Institution

Stanford Microwave Integrated Circuits Lab., Stanford Univ., Stanford, CA, USA

fYear

2014

fDate

22-24 April 2014

Firstpage

69

Lastpage

70

Abstract

We propose micro Barkhausen-Kurz oscillators suitable for operation at THz frequencies and can be fabricated along-side CMOS or III-V ICs. Electron dynamics will be described along with theoretical and particle-in-cell simulation results. Device performance and limitations will be discussed with emphasis on scaling of properties with frequency. Preliminary cathode and repeller structures made on silicon will be shown.

Keywords

CMOS analogue integrated circuits; III-V semiconductors; elemental semiconductors; field effect MIMIC; millimetre wave oscillators; silicon; submillimetre wave integrated circuits; submillimetre wave oscillators; terahertz wave devices; CMOS; III-V ICs; Si; THz frequency; cathode; device performance; electron dynamics; microBarkhausen-Kurz oscillators; particle-in-cell simulation; repeller structures; terahertz integrated systems; Admittance; Anodes; Cathodes; Harmonic analysis; Oscillators; Radio frequency; Space charge; Barkhausen-Kurz; integrated systems; millimeter-wave; submillimeter-wave; terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference, IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IVEC.2014.6857494

Filename

6857494