DocumentCode :
1822327
Title :
Multiphonon capture processes in self-assembled quantum dots
Author :
Magnusdottir, L. ; Uskov, A. ; Bischoff, S. ; Mork, J.
Author_Institution :
Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
206
Lastpage :
207
Abstract :
Summary form only given. We investigate capture of carriers from states in the continuous part of the energy spectrum into the discrete states of self-assembled InAs/GaAs QDs via emission of one or two phonons. We are not aware of any other investigations of two-phonon mediated capture processes in QDs, but we show that this may be an efficient capture mechanism. The phonons are assumed to be bulk GaAs LO phonons with zero dispersion. The QD was modelled by a finite confinement potential well in the effective-mass approximation.
Keywords :
III-V semiconductors; effective mass; electron-phonon interactions; gallium arsenide; indium compounds; quantum well lasers; self-assembly; semiconductor quantum dots; InAs-GaAs; bulk LO phonons; carrier injection; discrete states; effective-mass approximation; finite confinement potential well; multiphonon capture processes; narrow energy interval; self-assembled quantum dots; single-phonon capture; two-phonon mediated capture processes; zero dispersion; Delay; Excitons; Lattices; Plasma temperature; Polarization; Probes; Quantum dot lasers; Quantum dots; Resonance; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
Type :
conf
DOI :
10.1109/QELS.2001.962073
Filename :
962073
Link To Document :
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