The influence of electrodes on the reliability to PZT thin film

Author

Lee, Byoung-Soo ; Kim, Seung-Hyun ; Yuk, Jae-Ho ; Lee, Bok-Hee ; Shin, Paik-Kyun ; Lee, Duck-Chool

Author_Institution

Res. Center for Next-Generation High Voltage & Power Technol., Inha Univ., Inchon, South Korea

Volume

2

fYear

2003

fDate

1-5 June 2003

Firstpage

790

Abstract

The effect of the Pt electrode and the Pt-IrO₂ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a Pt-IrO₂ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized Pt-IrO₂ hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.

Keywords

dielectric hysteresis; ferroelectric capacitors; ferroelectric ceramics; ferroelectric thin films; lead compounds; leakage currents; oxidation; reliability; PZT; PZT thin film; PbZrO3TiO3; Pt; Pt electrode; Pt thin films; Pt-IrO₂; Pt-IrO₂ hybrid electrode; Pt-TiN-Si; Pt/TiN/poly-Si plug; TiN diffusion barrier layer; fatigue; ferroelectric device; leakage current; noncolumnar structure; oxidation; reliability; stacked structure; Capacitors; Electrodes; Fatigue; Ferroelectric films; Ferroelectric materials; Leakage current; Microstructure; Oxidation; Tin; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on

ISSN

1081-7735

Print_ISBN

0-7803-7725-7

Type

conf

DOI

10.1109/ICPADM.2003.1218536

Filename

1218536