• DocumentCode
    182297
  • Title

    Keynote 1: Is GaN a Game Changing Device ?

  • Author

    Lee, Fred C.

  • Author_Institution
    University of Virginia Technic
  • fYear
    2014
  • fDate
    21-24 Sept. 2014
  • Firstpage
    8
  • Lastpage
    14
  • Abstract
    Gallium Nitride devices are gathering momentum, with a number of recent market introductions for such applications as point of load converters (POL), off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance and, therefore, are capable of operating at a switching frequency 10 times of that of the silicon MOSFET. This might significantly impact the power density, form factor and even the current design and manufacturing practice.
  • Keywords
    Companies; Educational institutions; Engines; Gallium nitride; Industries; Power electronics; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Motion Control Conference and Exposition (PEMC), 2014 16th International
  • Conference_Location
    Antalya, Turkey
  • Type

    conf

  • DOI
    10.1109/EPEPEMC.2014.6980498
  • Filename
    6980498