0.850 THz vacuum electronic power amplifier

Author

Tucek, Jack C. ; Basten, Mark A. ; Gallagher, David A. ; Kreischer, Kenneth E.

Author_Institution

Electron. Syst., Northrop Grumman Corp., Rolling Meadows, IL, USA

fYear

2014

fDate

22-24 April 2014

Firstpage

153

Lastpage

154

Abstract

Northrop Grumman Electronic Systems has developed the first, compact, microfabricated vacuum electronic amplifier operating at 0.835-0.875 THz. The amplifier produced >50 mW of output power at the window at frequencies between 0.835-0.842 THz and 39.4 mW of output power at 0.850 THz. The amplifier exhibited 26 dB of small signal gain and 11 GHz of instantaneous bandwidth. The compact power amplifier is based on a DRIE-fabricated folded waveguide slow-wave circuit, together with a high current density thermionic cathode, a high field permanent magnet solenoid, and a single-stage depressed collector for overall device efficiency.

Keywords

sputter etching; submillimetre wave amplifiers; vacuum microelectronics; DRIE-fabricated folded waveguide slow-wave circuit; Northrop Grumman Electronic Systems; compact power amplifier; frequency 0.835 THz to 0.875 THz; frequency 11 GHz; gain 26 dB; high current density thermionic cathode; high field permanent magnet solenoid; microfabricated vacuum electronic amplifier; power 39.4 mW; single-stage depressed collector; Bandwidth; Cathodes; Gain; Loss measurement; Power amplifiers; Power generation; Testing; Terahertz; high-resolution imaging; submillimeter wave; vacuum electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference, IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IVEC.2014.6857535

Filename

6857535