CMOS-integrated 40GHz germanium waveguide photodetector for on-chip optical interconnects

Author

Assefa, Solomon ; Xia, Fengnian ; Bedell, S.W. ; Zhang, Ying ; Topuria, Teya ; Rice, Philip M. ; Vlasov, Yurii A.

Author_Institution

Thomas J. Watson Res. Center, IBM, Yorktown Heights, NY

fYear

2009

fDate

22-26 March 2009

Firstpage

1

Lastpage

3

Abstract

Compact (0.7 mum times 20mum) germanium waveguide photodetector operating at 40 Gbps is demonstrated. Monolithic integration of high-quality Ge-on-insulator single-crystalline layer into the CMOS stack was achieved by lateral seeded crystallization during CMOS wells activation anneal above germanium melting temperature.

Keywords

CMOS integrated circuits; germanium; optical interconnections; photodetectors; CMOS integrated circuit; CMOS stack; Ge-on-insulator; bit rate 40 Gbit/s; compact germanium waveguide photodetector; frequency 40 GHz; lateral seeded crystallization; monolithic integration; on-chip optical interconnects; single-crystalline layer; Absorption; Annealing; Bandwidth; CMOS process; Crystallization; Germanium; Optical interconnections; Optical waveguides; Photodetectors; Temperature; (040.5160) Photodetectors; (130.0250) Optoelectronics; (200.4650) Optical interconnects;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-2606-5

Electronic_ISBN

978-1-55752-865-0

Type

conf

Filename

5032585