DocumentCode
1823205
Title
Dynamic distortion characteristics of silicon evanescent detectors and phase modulators
Author
Nunoya, Nobuhiro ; Ramaswamy, Anand ; Chen, Hui-Wen ; Park, Hyundai ; Bowers, John E.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA
fYear
2009
fDate
22-26 March 2009
Firstpage
1
Lastpage
3
Abstract
The linearity of silicon evanescent modulators and quantum well detectors was measured for the first time. An output IP3 of 21 dBm for detectors and a peak phase input IP3 of 2.6pi for reverse biased phase modulators was achieved at 500 MHz.
Keywords
optical distortion; optical modulation; quantum wells; silicon; dynamic distortion; phase modulators; quantum well detectors; silicon evanescent detectors; silicon evanescent modulators; Detectors; III-V semiconductor materials; Linearity; Optical distortion; Optical modulation; Phase detection; Phase distortion; Phase modulation; Photoconductivity; Silicon; 250.0040 Detectors; 250.4110 Modulators;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location
San Diego, CA
Print_ISBN
978-1-4244-2606-5
Electronic_ISBN
978-1-55752-865-0
Type
conf
Filename
5032589
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