Title :
Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs
Author :
Karcher, Armin ; Bebek, Christopher J. ; Kolbe, William F. ; Maurath, Dominic ; Prasad, Valmiki ; Uslenghi, Michela ; Wagner, Martin
Author_Institution :
Lawrence Berkeley Nat. Lab., CA, USA
Abstract :
Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800×1100, 15 μm pixel, 280 μm thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.
Keywords :
CCD image sensors; optical transfer function; spatial variables measurement; 1100 pixel; 15 micron; 280 micron; 450 to 650 nm; 6 to 80 V; 800 pixel; imaging device; lateral charge diffusion measurement; point spread function; spatial resolution; thick fully depleted back-illuminated p-channel CCD; Charge coupled devices; Charge measurement; Current measurement; Extraterrestrial measurements; Laboratories; Size measurement; Spatial resolution; Thickness measurement; Voltage; Wavelength measurement;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352164
