DocumentCode
1823344
Title
On gated diodes for ESD protection in bulk FinFET CMOS technology
Author
Thijs, Steven ; Griffoni, Alessio ; Linten, Dimitri ; Chen, Shih-Hung ; Hoffmann, Thomas ; Groeseneken, Guido
Author_Institution
Imec, Leuven, Belgium
fYear
2011
fDate
11-16 Sept. 2011
Firstpage
1
Lastpage
8
Abstract
The transient behavior of bulk FinFET gated diodes is investigated under ESD conditions. Series diodes are studied in circuit configuration to evaluate their effectiveness as local clamp or traditional dual-diode ESD protection solution. An optimal diode layout configuration is proposed, considering thermal properties, area footprint, capacitive loading and voltage clamping capability.
Keywords
CMOS integrated circuits; MOSFET; electrostatic discharge; protection; semiconductor diodes; ESD protection; bulk FinFET CMOS technology; bulk FinFET gated diodes; capacitive loading; circuit configuration; optimal diode layout configuration; series diodes; thermal property; traditional dual-diode ESD protection solution; voltage clamping capability; Clamps; Current measurement; Electrostatic discharge; FinFETs; Layout; Logic gates; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location
Anaheim, CA
ISSN
Pending
Electronic_ISBN
Pending
Type
conf
Filename
6045566
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