New high voltage ESD protection devices based on bipolar transistors for automotive applications

Author

Gendron, Amaury ; Gill, Chai ; Zhan, Carol ; Kaneshiro, Mike ; Cowden, Bill ; Hong, Changsoo ; Ida, Richard ; Nguyen, Dung

Author_Institution

Freescale Semicond., Tempe, AZ, USA

fYear

2011

fDate

11-16 Sept. 2011

Firstpage

1

Lastpage

10

Abstract

A novel ESD protection based on thyristor-like coupled NPN and PNP transistors is presented. This protection is developed in a 0.25 μm SmartMOS® technology targeting 10 to 65 Volts IO pins. TCAD simulations are leveraged to analyze the physical behavior and a comprehensive qualification for automotive applications is presented, including HBM, MM and gun robustness measurements, transient voltage overshoot characterization in TLP, very fast TLP characterization and DC tests from -40 to 175°C. Outstanding performances are reported for the implementation in an ECU product.

Keywords

automotive electronics; bipolar transistors; electrostatic discharge; DC tests; ECU product; HBM; IO pins; MM; PNP transistors; SmartMOS technology; TCAD simulations; TLP characterization; automotive applications; bipolar transistors; comprehensive qualification; gun robustness measurements; high voltage ESD protection devices; physical behavior; size 0.25 mum; thyristor-like coupled NPN; transient voltage overshoot characterization; voltage 10 V to 65 V; Current measurement; Electrostatic discharge; Robustness; Stress; Substrates; Thyristors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd

Conference_Location

Anaheim, CA

ISSN

Pending

Electronic_ISBN

Pending

Type

conf

Filename

6045567