DocumentCode
1823487
Title
Novel techniques to modulate the holding voltage in high voltage ESD protections
Author
Farbiz, Farzan ; Salman, Akram A. ; Boselli, Gianluca
Author_Institution
Texas Instrum., Dallas, TX, USA
fYear
2011
fDate
11-16 Sept. 2011
Firstpage
1
Lastpage
7
Abstract
Two new techniques are proposed to modulate the holding voltage of diode-isolated drain extended structures with no increase in area, capacitance, or DC leakage. The effectiveness of these techniques is verified using TCAD simulations as well as DC and TLP measurements.
Keywords
MOSFET; electrostatic discharge; DC measurement; TCAD simulations; TLP measurement; diode isolated drain extended structure; high voltage ESD protections; holding voltage modulation; novel techniques; Electrostatic discharge; Resistors; Simulation; Structural rings; Substrates; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location
Anaheim, CA
ISSN
Pending
Electronic_ISBN
Pending
Type
conf
Filename
6045571
Link To Document