Title :
Novel techniques to modulate the holding voltage in high voltage ESD protections
Author :
Farbiz, Farzan ; Salman, Akram A. ; Boselli, Gianluca
Author_Institution :
Texas Instrum., Dallas, TX, USA
Abstract :
Two new techniques are proposed to modulate the holding voltage of diode-isolated drain extended structures with no increase in area, capacitance, or DC leakage. The effectiveness of these techniques is verified using TCAD simulations as well as DC and TLP measurements.
Keywords :
MOSFET; electrostatic discharge; DC measurement; TCAD simulations; TLP measurement; diode isolated drain extended structure; high voltage ESD protections; holding voltage modulation; novel techniques; Electrostatic discharge; Resistors; Simulation; Structural rings; Substrates; Transistors; Voltage measurement;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location :
Anaheim, CA
Electronic_ISBN :
Pending
