β matrix concept for ESD power devices, demonstrators in C45nm & C32nm CMOS technology

The Electrostatic Discharge (ESD) protection for advanced CMOS technologies is based on efficient power devices. One challenge is to have compact power devices with high flexibility for IO frame integration. In this context, we propose the β matrix concept to provide robust and compact ESD power devices. Moreover, the βij element could be also a matrix with N+/P+ topology which leads to for example embedded diode or dual SCR in the same device. To illustrate, this paper presents and compare silicon results of an ESD diode in C45nm and of a dual isolated Silicon Controlled Rectifier (SCR) in C32nm CMOS technology. Also, these devices within compatible IO frame are qualified through Transmission Line Pulse (TLP) & Very Fast TLP. Moreover, a Beta matrix with its associated trigger circuit is also presented and discussed.