DocumentCode :
1823718
Title :
Charge trapping at high doses in an active matrix flat panel dosimeter
Author :
Roberts, D.A. ; Moran, J.M. ; Antonuk, L.E. ; El-Mohri, Y. ; Fraass, B.A.
Author_Institution :
Dept. of Radiat. Oncology, Michigan Univ., Ann Arbor, MI, USA
Volume :
3
fYear :
2003
fDate :
19-25 Oct. 2003
Firstpage :
1599
Abstract :
Active matrix flat panel dosimeters (AMFPD´s) have a high density of charge trapping centers (∼3×1015/cm3) which lead to both lag and ghosting in reconstructed dose measurements. Lag is due to charge release within the detector and is a function of the lifetime of the trapping centers within the detector. Ghosting, defined as excess charge not produced by charge release, is a phenomenon believed to be caused by reduced charge trapping probability due to the trapped charge population density being greater after exposure to a radiation field than previous to the exposure. This work examines the characteristics of a large AMFPD (26 cm × 26 cm) detector for long exposure times (up to 1 minute) and high doses (up to 3 Gy). This detector was operated in a direct detection mode. Nonlinear response functions were mapped as a function of both exposure time and dose at a beam energy of 6 MV. Additionally, the impulse response functions (IRF´s) were also measured at 6 MV for the same set of exposure times and doses used for the measurement of the nonlinear mapping. These IRF´s are shown to be functions of both exposure time and dose delivered to the detector. The reproducibility of the dose measurements is discussed.
Keywords :
dosimeters; image sensors; 1 min; 26 cm; 3 Gy; 6 MV; active matrix flat panel dosimeter; charge trapping centers; detector; ghosting; impulse response functions; lag; nonlinear response functions; reconstructed dose measurements; Amorphous silicon; Charge measurement; Current measurement; Density measurement; Detectors; Dosimetry; Image reconstruction; Photodiodes; Thin film transistors; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8257-9
Type :
conf
DOI :
10.1109/NSSMIC.2003.1352183
Filename :
1352183
Link To Document :
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