DocumentCode :
1823770
Title :
A SCR-based ESD protection for MEMS — Merits and challenges
Author :
Sangameswaran, Sandeep ; Thijs, Steven ; Scholz, Mirko ; De Coster, Jeroen ; Linten, Dimitri ; Groeseneken, Guido ; De Wolf, Ingrid
Author_Institution :
imec, Heverlee, Belgium
fYear :
2011
fDate :
11-16 Sept. 2011
Firstpage :
1
Lastpage :
10
Abstract :
A silicon-controlled rectifier (SCR) is presented as an ESD protection device for microelectromechanical systems (MEMS) in a MEMS-on-CMOS process flow. Measurements on SiGe MEMS devices have been performed and the SCR is shown to provide the Class0 MEMS with protection levels up to 5.5kV HBM. The effect of the MEMS capacitance on the SCR robustness during ESD is investigated. Through simulations and measurements, the scope of the proposed ESD protection scheme has been evaluated. Current overshoots caused by large MEMS capacitances (>;100pF) are shown to be a potential issue in the SCR operation.
Keywords :
CMOS integrated circuits; Ge-Si alloys; electrostatic discharge; micromechanical devices; rectifiers; MEMS capacitance effect; MEMS-on-CMOS process flow; SCR-based ESD protection device; SiGe; current overshoot; microelectromechanical system; silicon-controlled rectifier; CMOS integrated circuits; Electrostatic discharge; Micromechanical devices; Performance evaluation; Stress; Thyristors; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location :
Anaheim, CA
ISSN :
Pending
Electronic_ISBN :
Pending
Type :
conf
Filename :
6045581
Link To Document :
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