Author :
Chen, S.-H. ; Griffoni, A. ; Srivastava, P. ; Linten, D. ; Thijs, S. ; Scholz, M. ; Marcon, D. ; Gallerano, A. ; Lafonteese, D. ; Concannon, A. ; Vashchenko, V.A. ; Hopper, P. ; Bychikhin, S. ; Pogany, D. ; Van Hove, M. ; Decoutere, S. ; Groeseneken, G.
Abstract :
The ESD robustness of GaN-on-Si Schottky diodes are investigated using on-wafer HBM and TLP. Both forward and reverse diode operation modes are analyzed as a function of device geometry, which strongly impact the corresponding failure mechanism.
Keywords :
III-V semiconductors; Schottky diodes; electrostatic discharge; gallium compounds; semiconductor device reliability; silicon; wide band gap semiconductors; GaN; HBM ESD robustness; Schottky diodes; Si; TLP; electrostatic discharge; failure mechanism; human body model; transmission line pulsing; Electrostatic discharge; Gallium nitride; Leakage current; Robustness; Schottky barriers; Schottky diodes; Stress;
