DocumentCode
1823823
Title
HBM ESD robustness of GaN-on-Si Schottky diodes
Author
Chen, S.-H. ; Griffoni, A. ; Srivastava, P. ; Linten, D. ; Thijs, S. ; Scholz, M. ; Marcon, D. ; Gallerano, A. ; Lafonteese, D. ; Concannon, A. ; Vashchenko, V.A. ; Hopper, P. ; Bychikhin, S. ; Pogany, D. ; Van Hove, M. ; Decoutere, S. ; Groeseneken, G.
Author_Institution
imec, Leuven, Belgium
fYear
2011
fDate
11-16 Sept. 2011
Firstpage
1
Lastpage
8
Abstract
The ESD robustness of GaN-on-Si Schottky diodes are investigated using on-wafer HBM and TLP. Both forward and reverse diode operation modes are analyzed as a function of device geometry, which strongly impact the corresponding failure mechanism.
Keywords
III-V semiconductors; Schottky diodes; electrostatic discharge; gallium compounds; semiconductor device reliability; silicon; wide band gap semiconductors; GaN; HBM ESD robustness; Schottky diodes; Si; TLP; electrostatic discharge; failure mechanism; human body model; transmission line pulsing; Electrostatic discharge; Gallium nitride; Leakage current; Robustness; Schottky barriers; Schottky diodes; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location
Anaheim, CA
ISSN
Pending
Electronic_ISBN
Pending
Type
conf
Filename
6045583
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