• DocumentCode
    1823957
  • Title

    Scalable modeling studies on the SCR ESD protection device

  • Author

    Romanescu, Alexandru ; Beckirch-Ros, Helene ; Fonteneau, Pascal ; Legrand, Charles-Alexandre ; Ferrari, Philippe ; Arnould, Jean-Daniel

  • Author_Institution
    ST Microelectron., Crolles, France
  • fYear
    2011
  • fDate
    11-16 Sept. 2011
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    The demand for continuous improvements in ESD design and simulations brings the need of new and more accurate scalable models. For the SCR (silicon controlled rectifier), one of the most efficient ESD protection device, a scalability study was carried out, based on a previously developed model that emphasizes a tight relation between its equations and the actual physical phenomena.
  • Keywords
    electrostatic discharge; semiconductor device models; thyristors; ESD design; SCR ESD protection device; silicon controlled rectifier; Electrostatic discharge; Equations; Integrated circuit modeling; Mathematical model; Parameter extraction; Thyristors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
  • Conference_Location
    Anaheim, CA
  • ISSN
    Pending
  • Electronic_ISBN
    Pending
  • Type

    conf

  • Filename
    6045588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1823957