Title :
MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development
Author :
Niraula, M. ; Yasuda, Kazuhiro ; Namba, S. ; Kondo, Toshiaki ; Muramatsu, Shigeki ; Wajima, Y. ; Yamashita, Hiromasa ; Agata, Y.
Author_Institution :
Nagoya Inst. of Technol., Nagoya, Japan
Abstract :
Details about the MOVPE growth of thick single crystal CdZnTe layers on (211)Si substrates are presented. The growth was carried out at a substrate temperature of 650°C, using dimethylcadmium, dimethylzinc, and diethyltellurium precursors. Control of Zn-concentration in the range from 0 to 0.2 was performed by controlling the precursors´ flow-rates and ratio. Results from the XRD showed grown layers were single crystalline with no phase separation observed. The 4.2 K PL results show high intensity bound-exciton peaks which shifted to higher energies with increasing Zn-concentrations. A p-CdZnTe/p-CdTe/n-CdTe/n+-Si hetero-junction diode was fabricated and evaluated for its possible application in nuclear radiation detector development, which exhibited good rectification property.
Keywords :
II-VI semiconductors; MOCVD; X-ray diffraction; elemental semiconductors; excitons; p-i-n diodes; p-n heterojunctions; photoluminescence; rectification; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; CdZnTe-CdTe-Si; MOVPE growth; PL spectra; Si; XRD; diethyltellurium; dimethylcadmium; dimethylzinc; excitons; nuclear radiation detector development; p-n-heterojunction diode; rectification property; temperature 650 degC; thick single crystal epitaxial layers; Crystals; Detectors; Epitaxial growth; Epitaxial layers; Heterojunctions; Silicon; Substrates; CdZnTe; Si substrate; epitaxial layer; heterojunction diode; nuclear radiation detector; vapor-phase growth;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2263841
