DocumentCode
1824037
Title
Harmonic power generation from the non-linear output capacitance of silicon LDMOS devices
Author
Gaddi, Roberto ; Pla, Jaime A. ; Tasker, Paul J.
Author_Institution
Div. of Electron., Cardiff Univ., UK
fYear
2001
fDate
2001
Firstpage
1
Lastpage
6
Abstract
Compression and harmonic generation mechanisms coupled to the non-linear output drift-region capacitance of Silicon LDMOS FET transistors are thoroughly investigated. Large-signal time-domain analysis is performed on the device operated as a class AB amplifier. Observations confirm significant real power being shifted from the fundamental to the even order harmonics by the capacitive element acting effectively as a varactor diode multiplier
Keywords
capacitance; elemental semiconductors; harmonic generation; power MOSFET; power amplifiers; silicon; time-domain analysis; Si; class AB amplifier; gain compression; harmonic power generation; large-signal time domain analysis; nonlinear output drift region capacitance; silicon LDMOS FET transistor; varactor diode multiplier; Capacitance; FETs; Frequency conversion; Power generation; Power measurement; Power system harmonics; Power system modeling; Radiofrequency amplifiers; Silicon; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
High Frequency Postgraduate Student Colloquium, 2001. 6th IEEE
Conference_Location
Cardiff
Print_ISBN
0-7803-7118-6
Type
conf
DOI
10.1109/HFPSC.2001.962148
Filename
962148
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