Title :
Biexciton dephasing in a semiconductor microcavity
Author :
Borri, P. ; Langbein, W. ; Woggon, Ulrike ; Jensen, Jesper Rindom ; Hvam, J.M.
Author_Institution :
Dortmund Univ., Germany
Abstract :
Summary form only given. The experimental observation of biexcitons in microcavities has been addressed recently. A well-resolved polariton-biexciton transition was observed in a high-quality GaAs single quantum well (QW) /spl lambda/-microcavity of 25 nm well width using a pump-probe experiment (Borri et al, Phys. Rev. B vol. 62, p. R7765, 2000). In this microcavity, the heavy-hole (HH) vacuum Rabi splitting is 3.6 meV, more than three times larger than the biexciton binding energy in the bare QW (1.1 meV). Due to the narrow linewidth of the polariton resonances, a well-resolved pump-induced optical absorption associated with biexcitons was observed. In this work, we investigate the coherent properties of the biexciton in the same structure using a two-beam four-wave mixing (FWM) experiment at 10 K.
Keywords :
III-V semiconductors; biexcitons; gallium arsenide; light absorption; multiwave mixing; optical pumping; semiconductor quantum wells; 1.1 meV; 10 K; 25 nm; 3.6 meV; FWM; GaAs; GaAs single quantum well microcavity; bare QW; biexciton binding energy; biexciton dephasing; biexcitons; heavy-hole vacuum Rabi splitting; microcavities; polariton resonance linewidth; polariton-biexciton transition; pump-induced optical absorption; pump-probe experiment; semiconductor microcavity; two-beam four-wave mixing; well width; Coherence; Delay effects; Four-wave mixing; Microcavities; Particle scattering; Polarization; Probes; Pulse measurements; Spectral analysis; Temperature dependence;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.962149