Title :
Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice
Author :
Emelyanov, Eugene A. ; Putyato, Mikhail A. ; Semyagin, Boris R. ; Feklin, Dmitrii F. ; Preobrazhenskii, Valerii V.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
Impact of substrate temperature, fuxes of As2, P2 and Ga on the layers composition of solid solution GaPxAs1-x(001) during molecular-beam epitaxy (MBE) was experimentally investigated. The experimental data obtained for a wide range of growth conditions were analyzed. The analysis results are represented in the form of the kinetic model describing the formation process for composition of GaPxAs1-x(001) solid solution during MBE. The model can be used for the choice of growth conditions of GaPxAs1-x(001) at a given phosphorus fraction.
Keywords :
III-V semiconductors; gallium compounds; molecular beam epitaxial growth; phosphorus compounds; semiconductor epitaxial layers; semiconductor growth; solid solutions; GaPxAs1-x; MBE; molecular beam epitaxy; phosphorus fraction; solid solutions; Chemical elements; Molecular beam epitaxial growth; Physics; Semiconductor process modeling; Solid modeling; Solids; Surface reconstruction; Molecular-beam epitaxy (MBE); arsenic; dimers; phosphorus; solid solution of GaPxAs1−x(001); sublattice composition;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-0761-8
DOI :
10.1109/EDM.2013.6641926
