Characterization of SWCNT-based TSV

Author

Salah, Khaled

Author_Institution

Mentor Graphics, Cairo, Egypt

fYear

2014

fDate

21-24 Sept. 2014

Firstpage

691

Lastpage

694

Abstract

High performance 3D TSV interconnects are important for reliability, choice of the filler material is also a critical issue as thermal incompatibility, electromigration and, high resistivity are still a bottleneck. In this paper, SW-CNT bundles as a prospective filler material for TSV are investigated compared to conventional filler materials like Cu, W, and poly-silicon. It is found that SW-CNT bundles exhibit unique electrical, thermal, and mechanical characteristics that can be used to fabricate better TSV interconnects.

Keywords

electrical resistivity; electromigration; integrated circuit interconnections; integrated circuit reliability; joining materials; single-wall carbon nanotubes; three-dimensional integrated circuits; C; SW-CNT bundles; SWCNT-based TSV; electrical characteristics; electromigration; filler material; high performance 3D TSV interconnects; mechanical characteristics; reliability; resistivity; thermal characteristics; thermal incompatibility; Integrated circuit modeling; Quantum capacitance; Silicon; Three-dimensional displays; Through-silicon vias; CNT; MWCNT; SWCNT; TSV; Three-Dimensional ICs; Through Silicon Via;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference and Exposition (PEMC), 2014 16th International

Conference_Location

Antalya

Type

conf

DOI

10.1109/EPEPEMC.2014.6980577

Filename

6980577