Stochastic resonance in VO2 thin films

Author

Aliev, Vladimir Sh ; Bortnikov, Sergey G. ; Gerasimova, Alina K.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2013

fDate

1-5 July 2013

Firstpage

10

Lastpage

14

Abstract

The phenomenon of stochastic resonance was found in vanadium dioxide films with conducting channel. Experimentally observed transfer coefficient of signal-to-noise ratio amounted of 250 in scheme. By adjusting input noise power it became possible to amplify amplitude of input signal in ratio of 1.6. The computer model was suggested to explain experimental dependencies of signal-to-noise ratio via input noise power.

Keywords

Gaussian noise; metal-insulator transition; semiconductor materials; semiconductor thin films; vanadium compounds; Gaussian white noise signal; VO₂; computer model; conducting channel; input noise power; input signal amplitude; semiconductor material; semiconductor-metal phase transition; signal-to-noise ratio; stochastic resonance; transfer coefficient; vanadium oxide thin films; Electron devices; Films; Nanoscale devices; Resistance; Signal to noise ratio; Stochastic resonance; Stochastic resonance; signal-to-noise ratio; vanadium dioxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-0761-8

Type

conf

DOI

10.1109/EDM.2013.6641927

Filename

6641927