Title :
Modeling of misft dislocation creation at Ge island — Si(111) substrate interface
Author :
Karpov, Alexander N. ; Trukhanov, Eugene M. ; Shwartz, Nataliya L.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The sizes of Ge island on Si(111) surface corresponding to introduction of misft dislocation were determined by modeling. The critical thickness of pseudomorphic Ge layer was demonstrated to be 2 bilayers with lateral island size exceeded 60 nm when creation of misft dislocations became energy-favorable.
Keywords :
Ge-Si alloys; dislocations; semiconductor epitaxial layers; Ge-Si; epitaxial layers; lateral island; misfit dislocations; substrate interface; Electron devices; Epitaxial growth; Nanoscale devices; Silicon; Substrates; Tensile stress; Ge; Si(111); dislocation; modeling;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-0761-8
DOI :
10.1109/EDM.2013.6641928
