DocumentCode
182447
Title
The research on RF output envelope of C-band Multi-Beam Klystron
Author
Yaogen Ding ; Jin Cao ; Xiaoxin Sun ; Bin Shen ; Haibing Ding
Author_Institution
Key Lab. of High Power Microwave Sources & Technol, Inst. of Electron., Beijing, China
fYear
2014
fDate
22-24 April 2014
Firstpage
331
Lastpage
332
Abstract
The shoulder and the tilt of RF output envelope of the C-band broadband MBK are described and discussed in the paper. The RF envelope shoulder occurs mainly at low part of the operating frequency band, and is caused by the gassing of microwave attenuation material FeSiAl covering on the wall of the cavity. The RF envelope tilt is caused by the drop of the pulse voltage and the dependence of efficiency on the beam voltage. These physical phenomena are explained and analyzed in the paper. The methods for overcoming the RF envelope shoulder and reduce the RF envelope tilt are also discussed.
Keywords
klystrons; C-band multibeam klystron; RF envelope shoulder; beam voltage; broadband MBK; envelope tilt; microwave attenuation material; physical phenomena; pulse voltage; Attenuation; Cavity resonators; Materials; Microwave circuits; Microwave oscillators; Radio frequency; Gassing; Microwave Attenuation Material; Multi-Beam Klystrons (MBKs); RF Output Envelope; Shoulder;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference, IEEE International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/IVEC.2014.6857624
Filename
6857624
Link To Document