DocumentCode
1824473
Title
Influence of temperature and catalyst drop diameter on GaAs nanowire growth
Author
Knyazeva, Maria V. ; Shwartz, Nataliya L.
Author_Institution
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear
2013
fDate
1-5 July 2013
Firstpage
19
Lastpage
21
Abstract
Analysis of GaAs nanowire growth was carried out using Monte Carlo simulation. Nanowire formation was observed only within some definite temperature range. Nonlinear dependence of growth rate on temperature and decreasing dependence of growth rate on catalyst drop diameter was demonstrated. It was shown that optimal choice of growth parameters allows to achieve stoichiometric vertical nanowire growth.
Keywords
III-V semiconductors; Monte Carlo methods; catalysts; gallium arsenide; nanowires; semiconductor growth; stoichiometry; GaAs; GaAs nanowire growth; Monte Carlo simulation; catalyst drop diameter; stoichiometric vertical nanowire growth; temperature dependence; Gallium; Gallium arsenide; Gold; Monte Carlo methods; Nanoscale devices; Surface morphology; Temperature dependence; GaAs; Monte Carlo; nanowire; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location
Novosibirsk
ISSN
2325-4173
Print_ISBN
978-1-4799-0761-8
Type
conf
DOI
10.1109/EDM.2013.6641929
Filename
6641929
Link To Document