Title :
Influence of temperature and catalyst drop diameter on GaAs nanowire growth
Author :
Knyazeva, Maria V. ; Shwartz, Nataliya L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
Analysis of GaAs nanowire growth was carried out using Monte Carlo simulation. Nanowire formation was observed only within some definite temperature range. Nonlinear dependence of growth rate on temperature and decreasing dependence of growth rate on catalyst drop diameter was demonstrated. It was shown that optimal choice of growth parameters allows to achieve stoichiometric vertical nanowire growth.
Keywords :
III-V semiconductors; Monte Carlo methods; catalysts; gallium arsenide; nanowires; semiconductor growth; stoichiometry; GaAs; GaAs nanowire growth; Monte Carlo simulation; catalyst drop diameter; stoichiometric vertical nanowire growth; temperature dependence; Gallium; Gallium arsenide; Gold; Monte Carlo methods; Nanoscale devices; Surface morphology; Temperature dependence; GaAs; Monte Carlo; nanowire; simulation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-0761-8
DOI :
10.1109/EDM.2013.6641929
