Title :
Numerical model for MIS-structures characterization
Author :
Krasukov, Anton Y.
Author_Institution :
Nat. Res. Univ. of Electron. Technol., Moscow, Russia
Abstract :
One dimensional numerical model for MIS-structures characterization is presented. Model is based on solving the Poisson equation in a two-layer structure: insulator-semiconductor. Model capabilities were considered in two examples.
Keywords :
MIS structures; Poisson equation; semiconductor-insulator boundaries; MIS-structures characterization; Poisson equation; insulator-semiconductor; one dimensional numerical model; two-layer structure; Electric potential; Logic gates; Mathematical model; Metals; Numerical models; Semiconductor device modeling; Semiconductor process modeling; MIS-structure; numerical simulation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-0761-8
DOI :
10.1109/EDM.2013.6641930
