• DocumentCode
    1824487
  • Title

    Numerical model for MIS-structures characterization

  • Author

    Krasukov, Anton Y.

  • Author_Institution
    Nat. Res. Univ. of Electron. Technol., Moscow, Russia
  • fYear
    2013
  • fDate
    1-5 July 2013
  • Firstpage
    22
  • Lastpage
    24
  • Abstract
    One dimensional numerical model for MIS-structures characterization is presented. Model is based on solving the Poisson equation in a two-layer structure: insulator-semiconductor. Model capabilities were considered in two examples.
  • Keywords
    MIS structures; Poisson equation; semiconductor-insulator boundaries; MIS-structures characterization; Poisson equation; insulator-semiconductor; one dimensional numerical model; two-layer structure; Electric potential; Logic gates; Mathematical model; Metals; Numerical models; Semiconductor device modeling; Semiconductor process modeling; MIS-structure; numerical simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
  • Conference_Location
    Novosibirsk
  • ISSN
    2325-4173
  • Print_ISBN
    978-1-4799-0761-8
  • Type

    conf

  • DOI
    10.1109/EDM.2013.6641930
  • Filename
    6641930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1824487