DocumentCode
1824555
Title
Common shallow ridge waveguide laser-electroabsorption modulator using lateral ion implantation
Author
Prosyk, K. ; Moore, R.S. ; Williams, P.J. ; Robbins, D.J. ; Haysom, J.E. ; Kearley, M.Q. ; Britton, P. ; Flirth, P. ; Ait-Ouali, A.
Author_Institution
Bookham Inc., Kanata, Ont., Canada
Volume
2
fYear
2005
fDate
6-11 March 2005
Abstract
For the first time, a laser and high-speed modulator are integrated using a common shallow etched ridge waveguide. Ion implantation lateral to the modulator ridge provides electrical isolation suitable for 10 Gb/s long reach, 55 °C operation.
Keywords
electroabsorption; ion implantation; light absorption; optical communication equipment; optical fibre communication; optical modulation; ridge waveguides; waveguide lasers; 10 Gbit/s; 55 degC; common shallow ridge waveguide laser; electrical isolation; electroabsorption modulator; high-speed modulator; lateral ion implantation; Distributed feedback devices; Etching; Fiber lasers; Ion implantation; Laser feedback; Optical losses; Optical scattering; Optical waveguides; Quantum well lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN
1-55752-783-0
Type
conf
DOI
10.1109/OFC.2005.192664
Filename
1498400
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