Thermal modeling of pulse current trimming

The simple 1-D thermal model of current trimming of the polysilicon resistors is described. Presented model is considered for polycrystalline silicon resistors which are separated from single-crystalline silicon substrate by thin SiO₂ layer. Analytical solutions for steady-state heating and numerical solution for transient heating are presented. The temperature achieved in polysilicon resistors during current trimming process is mainly depends on thermal conductivity of SiO₂ layer. The experimental method for determining the thermal conductivity of SiO₂ layer is presented. Steady-state and transient experimental data based on measured thermal conductivity are submitted.