• DocumentCode
    1824622
  • Title

    Diode protection of GMR sensors

  • Author

    Iben, Icko Eric Timothy ; Gebreselasie, Ephrem G. ; Loiseau, Alain ; Gauthier, Robert

  • Author_Institution
    Tape Head Dev. Group, IBM Corp., San Jose, CA, USA
  • fYear
    2011
  • fDate
    11-16 Sept. 2011
  • Firstpage
    1
  • Lastpage
    11
  • Abstract
    Magnetoresistive (MR) sensors are damaged by pulses of the order of a few Volts with a few ns duration. The forward recovery time of diodes used to protect MR sensors can dramatically diminish the protection efficiency of diodes. This paper addresses the short time response of diodes.
  • Keywords
    electrostatic discharge; giant magnetoresistance; magnetic sensors; magnetic storage; magnetoresistive devices; semiconductor diodes; GMR sensors; diode protection; forward recovery time; magnetoresistive sensor; Current measurement; Magnetic sensors; Power cables; Resistors; Sensor phenomena and characterization; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
  • Conference_Location
    Anaheim, CA
  • ISSN
    Pending
  • Electronic_ISBN
    Pending
  • Type

    conf

  • Filename
    6045612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1824622