Title :
Diode protection of GMR sensors
Author :
Iben, Icko Eric Timothy ; Gebreselasie, Ephrem G. ; Loiseau, Alain ; Gauthier, Robert
Author_Institution :
Tape Head Dev. Group, IBM Corp., San Jose, CA, USA
Abstract :
Magnetoresistive (MR) sensors are damaged by pulses of the order of a few Volts with a few ns duration. The forward recovery time of diodes used to protect MR sensors can dramatically diminish the protection efficiency of diodes. This paper addresses the short time response of diodes.
Keywords :
electrostatic discharge; giant magnetoresistance; magnetic sensors; magnetic storage; magnetoresistive devices; semiconductor diodes; GMR sensors; diode protection; forward recovery time; magnetoresistive sensor; Current measurement; Magnetic sensors; Power cables; Resistors; Sensor phenomena and characterization; Voltage measurement;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location :
Anaheim, CA
Electronic_ISBN :
Pending
