DocumentCode :
1824725
Title :
Abnormal electrical capacitance behavior of VO2-films-based microstructures near semiconductor-to-metal phase transition
Author :
Aliev, Vladimir Sh ; Bortnikov, Sergey G. ; Voronkovsky, Vitaliy A.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
fYear :
2013
fDate :
1-5 July 2013
Firstpage :
49
Lastpage :
52
Abstract :
Abnormal behavior of electrical capacity was investigated for planar microstructures consisting of VO2 films grown on sapphire and metal (Ni/Au) electrodes. At heating from 293 K to 350 K abrupt change in electrical capacitance of microstructures was revealed by 7 orders of magnitude. Abnormally high electrical capacity is supposed to cause by metal clusters formation with divaricated surface in VO2 films near semiconductor-to-metal phase transition.
Keywords :
capacitance; metal-insulator transition; permittivity; sapphire; vanadium compounds; Al2O3; VO2; abnormal electrical capacitance behavior; metal electrodes; planar microstructures; sapphire; semiconductor to metal phase transition; temperature 293 K to 350 K; Capacitance; Electrodes; Films; Fractals; Microstructure; Resistance; Temperature measurement; Vanadium dioxide; abnormal capacitance behavior; fractal surface;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
ISSN :
2325-4173
Print_ISBN :
978-1-4799-0761-8
Type :
conf
DOI :
10.1109/EDM.2013.6641938
Filename :
6641938
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1824725
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