Title :
The investigation of Pt/HgCdTe and oxide/HgCdTe heterointerface formation by method XPS in situ
Author :
Kesler, Valeriy G. ; Zakirov, Evgeniy R.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The work is devoted to investigation of heterointerface formation during platinum deposition on a HgCdTe surface and in a process of HgCdTe surface oxidation. The chemical composition and film thickness were measured by X-ray photoelectron spectroscopy (XPS) at different stages of deposition (oxidation) without exposition of samples to laboratory atmosphere. The deposition of platinum results in HgCdTe surface stoichiometry violation and Te segregation. The dependence of oxide thickness on oxidation time in glow discharge plasma was near-logarithmic. The monotonous increasing of Cd/Te ratio and decreasing of Hg/Te ratio with increasing of oxide layer thickness were observed.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; electron beam deposition; glow discharges; mercury compounds; oxidation; plasma materials processing; platinum; semiconductor epitaxial layers; stoichiometry; surface segregation; HgCdTe; Pt-HgCdTe; X-ray photoelectron spectroscopy; XPS; chemical composition; electron beam evaporation; epilayers; film thickness; glow discharge plasma; heterointerface formation; oxidation time; oxide thickness dependence; platinum deposition; surface oxidation; surface stoichiometry; tellerium surface segregation; Chemicals; Etching; Oxidation; Plasmas; Platinum; Surface discharges; HgCdTe; Oxidation; Plasma; Pt; XPS;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-0761-8
DOI :
10.1109/EDM.2013.6641939
