A Novel CMOS Tunable Transversal Active Filter Adaptable to Temperature Variations and Circuit Elements Tolerance

Author

Dousti, Massoud ; Shabani, Zahra ; Suratgar, Amir Abolfazl

Author_Institution

Dept. of Electr. Eng., Islamic Azad Univ. (IAU), Tehran, Iran

fYear

2010

fDate

18-25 July 2010

Firstpage

71

Lastpage

74

Abstract

In this paper, a three taps transversal filter for working at C-Band was designed. This filter was designed in SiGe BiCMOS 0.35 μm technology. A tuning section, which was implemented by combination of RLC devices and a DC voltage (Vt) with the range of changing 0-2V was designed and added to the filter structure and made it tunable. This new proposed filter has a high flexibility in tuning the central frequency between 2.4 to 3.4 GHz and also in tuning gain. By these two important capabilities, this filter can adjust its performance with unwanted conditions, which make filter not to operate in the desirable mode. Temperature variations and circuit elements tolerance were two cases which their effects on filter operation were studied and finally it was explained that how filter denies their undesirable effects on its performance.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; active filters; microwave filters; microwave integrated circuits; transversal filters; BiCMOS technology; C-band; CMOS tunable transversal active filter; DC voltage; RLC devices; SiGe; circuit elements tolerance; frequency 2.4 GHz to 3.4 GHz; size 0.35 mum; voltage 0 V to 2 V; Band pass filters; Gain; MMICs; Microwave filters; Transversal filters; Tuning; SiGe BiCMOS; temperature variations; transversal filter; tunable filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Circuits, Electronics and Micro-Electronics (CENICS), 2010 Third International Conference on

Conference_Location

Venice

Print_ISBN

978-1-4244-7535-3

Type

conf

DOI

10.1109/CENICS.2010.21

Filename

5558163