Thermo-mechanical impact of the underfill-microbump interaction in 3D stacked integrated circuits

Author

Ivankovic, A. ; Vandevelde, B. ; Rebibis, K.J. ; La Manna, A. ; Van der Plas, G. ; Cherman, V. ; Beyne, E. ; De Wolf, I. ; Vandepitte, D.

Author_Institution

Imec, Leuven, Belgium

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

34

Lastpage

38

Abstract

This paper focuses on stress generated in Si dies as a consequence of the interaction mechanism of the underfill material and microbumps in 3D stacked integrated circuits (ICs). The impact of the mechanism is simulated by means of finite element modeling (FEM) and verified by electrical measurements. Furthermore, a FEM study is employed in order to provide proposals for stress reduction in the active Si area due to stacking. In result, guidelines for the choice of underfill material and critical dimensional parameters of 3D stacks are pointed out.

Keywords

elemental semiconductors; finite element analysis; integrated circuit interconnections; integrated circuit packaging; silicon; stress effects; thermomechanical treatment; three-dimensional integrated circuits; 3D stacked IC; 3D stacked integrated circuits; FEM; Si; active silicon area; critical dimensional parameters; electrical measurements; finite element modeling; silicon dies; stress reduction; thermomechanical impact; underfill material; underfill-microbump interaction; Current measurement; Finite element methods; Silicon; Stress; Three dimensional displays; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th

Conference_Location

Singapore

Print_ISBN

978-1-4577-1983-7

Electronic_ISBN

978-1-4577-1981-3

Type

conf

DOI

10.1109/EPTC.2011.6184381

Filename

6184381