• DocumentCode
    1826028
  • Title

    Near term solutions for 3D packaging of high performance DRAM

  • Author

    Solberg, Vern ; Zohni, Wael

  • Author_Institution
    Invensas (a Tessera Co.), San Jose, CA, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    39
  • Lastpage
    43
  • Abstract
    The revolution in performance driven electronic systems continues to challenge the IC packaging industry. To enable the new generations of processors to reach their performance potential and to achieve greater memory density and bandwidth, many manufacturers have developed a number of two-die package interface formats. Effective 3D stacking of memory die elements can offer many benefits; improved performance, increased component density and greater surface area utilization. The methodology selected for package assembly, however, must consider process complexity, the costs associated with each process, overall package assembly yield and end product reliability. To ensure that the memory functions are able to support the increased signal speed of the new generations of memory, package developers are relying more and more on die-stack assembly techniques and process refinement. This paper briefly reviews current two-die package assembly methodologies for the high performance, synchronous dynamic random-access memory (SDRAM) and introduces, in greater detail, an innovative two-die, face-down package assembly developed specifically for the next generation center bond memory products.
  • Keywords
    DRAM chips; assembling; integrated circuit packaging; integrated circuit reliability; integrated circuit yield; three-dimensional integrated circuits; 3D packaging; 3D stacking; IC packaging industry; SDRAM; component density; die-stack assembly techniques; end product reliability; face-down package assembly; high performance DRAM; memory bandwidth; memory density; memory die elements; memory functions; near term solutions; next generation center bond memory products; package assembly yield; performance driven electronic systems; performance potential; process complexity; process refinement; signal speed; surface area utilization; synchronous dynamic random-access memory; two-die package assembly methodology; two-die package interface formats; Assembly; Gold; Performance evaluation; SDRAM; Substrates; Surface treatment; Wires; DDP; DDR3; DDR4; DFD; DRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4577-1983-7
  • Electronic_ISBN
    978-1-4577-1981-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2011.6184382
  • Filename
    6184382