Compensation of shutter opening induced flux transients using a robust algorithm for the molecular beam epitaxy process

Author

Adams, Stephen J.

Author_Institution

Wright State Univ., Dayton, OH, USA

fYear

1994

fDate

20-22 Mar 1994

Firstpage

628

Lastpage

632

Abstract

In this paper a robust control system for the reduction of the flux transient caused by a shutter opening on a molecular beam epitaxy machine was developed and implemented. This control system determines the temperature setpoint modification needed to reduce the transient below 1.08 variation. The process identification system will determine the characteristic of the disturbance and the transfer function of the system. From this data a compensation signal is calculated and applied to the setpoint temperature of the PID controller. A computer is used to automatically apply the setpoint signal to the PID controller. This compensator will be integrated into a MBE control system developed at the Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio

Keywords

compensation; molecular beam epitaxial growth; process computer control; stability; temperature control; three-term control; transfer functions; transients; Materials Directorate; PID controller; Wright Laboratory; Wright-Patterson Air Force Base; compensation signal; disturbance; molecular beam epitaxy process; process identification system; robust control system; shutter opening induced flux transients; temperature setpoint modification; transfer function; Composite materials; Crystalline materials; Infrared detectors; Lattices; Molecular beam epitaxial growth; Optical materials; Robust control; Robustness; Substrates; Three-term control;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 1994., Proceedings of the 26th Southeastern Symposium on

Conference_Location

Athens, OH

ISSN

0094-2898

Print_ISBN

0-8186-5320-5

Type

conf

DOI

10.1109/SSST.1994.287801

Filename

287801