DocumentCode :
182620
Title :
An all-GaN differential driver for a 60 V GaN-based power amplifier with 1 GHz switching frequency
Author :
El Mahalawy, Mohamed ; Patten, Scott ; Landt, Don ; Ward, Rabab ; Walker, A. ; Fayed, Ayman
Author_Institution :
Adv. Technol. Center, Rockwell Collins, Cedar Rapids, IA, USA
fYear :
2014
fDate :
6-6 June 2014
Firstpage :
1
Lastpage :
3
Abstract :
An all-GaN gate-drive circuit is proposed and integrated in the same MMIC with a 60V GaN switching PA using 0.25μm depletion-mode process. The driver employs a multi-stage differential amplifier to operate a push-pull topology for switching the PA´s power device with much shorter transition times than other known gate-drive topologies, and thus allows for much higher switching frequencies. Measurements show less than 122ps transition times at the PA´s output and a switching frequency up to 1GHz.
Keywords :
power amplifiers; radio networks; GaN based power amplifier; GaN differential driver; MMIC; frequency 1 GHz; gate drive topologies; multistage differential amplifier; push pull topology; switching frequencies; switching frequency; Gallium nitride; Impedance; Logic gates; MMICs; Switches; Switching frequency; Topology; GaN technology; Gate Drivers; Switching PAs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/WAMICON.2014.6857740
Filename :
6857740
Link To Document :
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