• DocumentCode
    182679
  • Title

    Broadband operation of saturated amplifier with high efficiency

  • Author

    Bumman Kim ; Junghwan Son ; Seunghoon Jee ; Seokhyeon Kim ; Sangsu Jin

  • Author_Institution
    Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
  • fYear
    2014
  • fDate
    6-6 June 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A saturated operation of a power amplifier with the proper harmonic tuning can be highly efficient. The harmonics, mainly the second harmonic, are generated internally by the saturation operation. Matching tolerance for the harmonic tuning is very large and can be operated across a broadband with a high efficiency. Based on the saturated amplifier, we have realized a broadband amplifier using GaN device. Across the 1.75-2.17 GHz band, the output power, drain efficiency, and gain are between 51.0-52.3 dBm, 71.0-84.4%, and 8.22-11.6 dB, respectively.
  • Keywords
    III-V semiconductors; UHF power amplifiers; circuit tuning; gallium compounds; harmonic generation; impedance matching; wide band gap semiconductors; wideband amplifiers; GaN; broadband operation; broadband power amplifier; drain efficiency; frequency 1.75 GHz to 2.17 GHz; gain 51.0 dB to 52.3 dB; harmonic tuning; impedance matching circuit tolerance; saturated amplifier; saturation operation; second harmonic generation; Bandwidth; Broadband amplifiers; Harmonic analysis; Impedance; Impedance matching; Power amplifiers; Broadband; Efficiency; GaN; Harmonic Tuning; Power Amplifier; Saturated Amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/WAMICON.2014.6857770
  • Filename
    6857770