Title :
Broadband operation of saturated amplifier with high efficiency
Author :
Bumman Kim ; Junghwan Son ; Seunghoon Jee ; Seokhyeon Kim ; Sangsu Jin
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
A saturated operation of a power amplifier with the proper harmonic tuning can be highly efficient. The harmonics, mainly the second harmonic, are generated internally by the saturation operation. Matching tolerance for the harmonic tuning is very large and can be operated across a broadband with a high efficiency. Based on the saturated amplifier, we have realized a broadband amplifier using GaN device. Across the 1.75-2.17 GHz band, the output power, drain efficiency, and gain are between 51.0-52.3 dBm, 71.0-84.4%, and 8.22-11.6 dB, respectively.
Keywords :
III-V semiconductors; UHF power amplifiers; circuit tuning; gallium compounds; harmonic generation; impedance matching; wide band gap semiconductors; wideband amplifiers; GaN; broadband operation; broadband power amplifier; drain efficiency; frequency 1.75 GHz to 2.17 GHz; gain 51.0 dB to 52.3 dB; harmonic tuning; impedance matching circuit tolerance; saturated amplifier; saturation operation; second harmonic generation; Bandwidth; Broadband amplifiers; Harmonic analysis; Impedance; Impedance matching; Power amplifiers; Broadband; Efficiency; GaN; Harmonic Tuning; Power Amplifier; Saturated Amplifier;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual
Conference_Location :
Tampa, FL
DOI :
10.1109/WAMICON.2014.6857770
