DocumentCode
1826941
Title
100 Gb/s operation of an AlGaInAs semi-insulating buried heterojunction EML
Author
Kazmierski, C. ; Konczykowska, A. ; Jorge, F. ; Blache, F. ; Riet, M. ; Jany, C. ; Scavennec, A.
Author_Institution
III-V Lab., Alcatel-Thales, Marcoussis
fYear
2009
fDate
22-26 March 2009
Firstpage
1
Lastpage
3
Abstract
A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100 Gb/s InP Heterojunction Bipolar Transistor Multiplexing circuit, exhibiting an open eye diagram.
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium compounds; heterojunction bipolar transistors; indium compounds; optical fibre communication; optical transmitters; semiconductor lasers; AlGaInAs semiinsulating buried heterojunction EML; AlGaInAs-InP; InP; bit rate 100 Gbit/s; electro-absorption modulated laser; electro-optic bandwidth; heterojunction bipolar transistor multiplexing circuit; Bandwidth; Circuits; Clocks; Heterojunction bipolar transistors; High speed optical techniques; Indium phosphide; Optical buffering; Optical modulation; Quantum well lasers; Resistors; 250.5300; 250.7360;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location
San Diego, CA
Print_ISBN
978-1-4244-2606-5
Electronic_ISBN
978-1-55752-865-0
Type
conf
Filename
5032741
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