Digital gallium arsenide upgrades for military systems

Author

Prabhakar, A.

Author_Institution

Defense Adv. Res. Projects Agency, Arlington, VA, USA

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

15

Lastpage

17

Abstract

Digital gallium arsenide (GaAs) integrated circuits (ICs) are manufacturable with sufficiently high integration level, yield, and performance to be of great value to a variety of electronic systems. But, as with every new technology, there are substantial barriers to getting systems designers to use digital GaAs. To address this problem, DARPA has begun a program to demonstrate digital-GaAs-based subsystems that meet the needs of specific fielded military systems. Background information is presented on DARPA´s efforts in digital GaAs, the insertion demonstration projects are described, and trends and conclusions from these projects are summarized.<>

Keywords

III-V semiconductors; digital integrated circuits; gallium arsenide; military systems; monolithic integrated circuits; DARPA; GaAs; digital ICs; digital-GaAs-based subsystems; insertion demonstration projects; integrated circuits; military systems; system upgrading; Digital audio players; Electronic equipment manufacture; Gallium arsenide; Integrated circuit manufacture; Integrated circuit technology; Manufacturing; Microprocessors; Military aircraft; Silicon; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69284

Filename

69284