X-band high-efficiency GaAs MMIC PA

Author

Pereira, Antonio ; Parker, Anthony ; Heimlich, Michael ; Weste, Neil ; Quay, Ruediger ; Carrubba, V.

Author_Institution

Dept. of Eng., Macquarie Univ., Sydney, NSW, Australia

fYear

2014

fDate

6-6 June 2014

Firstpage

1

Lastpage

4

Abstract

This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was designed by using a reactively matched class AB approach. Here the PA was designed by engineering the load and source fundamental impedances for the highest PAE while short circuiting the second harmonic load termination. Measurement results performed at a frequency of 9 GHz show drain efficiency and PAE as high as 58.8% and 55.3% while delivering 0.55 W of maximum output power with a linear and power gain of 18.5 dB and 15 dB, respectively.

Keywords

III-V semiconductors; MMIC amplifiers; microwave power amplifiers; radar applications; 0.1um gallium arsenide technology; X-Band power amplifier; X-band high-efficiency gallium arsenide MMIC PA; drain efficiency; frequency 9 GHz; gain 15 dB; gain 18.5 dB; linear gain; load fundamental impedances; maximum output power; monolithic microwave integrated circuit; power 0.55 W; power gain; radar applications; reactively matched class AB approach; second harmonic load termination; source fundamental impedances; Gain; Gallium arsenide; Harmonic analysis; MMICs; PHEMTs; Power amplifiers; Power generation; GaAs MMIC PA; Phased Arrays; Reactively matched MMIC PA; X Band PA;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/WAMICON.2014.6857786

Filename

6857786